| 전압 - 공급: | 1.7 V ~ 1.95 V |
|---|---|
| 제조업체 장치 패키지: | 60-VFBGA (8x9) |
| 속도: | 200MHz |
| 연속: | - |
| 포장: | Tray |
| 패키지 / 케이스: | 60-VFBGA |
| 작동 온도: | -40°C ~ 85°C (TA) |
| 메모리 유형: | Volatile |
| 메모리 크기: | 512Mb (32M x 16) |
| 메모리 형식: | DRAM |
| 인터페이스: | Parallel |
MT46H32M16LFBF-5 AIT:C
IC SDRAM 512MBIT 200MHZ 60BGA
MT46H256M32R4JV-5 WT:B TR
IC SDRAM 8GBIT 200MHZ 168FBGA
MT46H32M16LFBF-5 IT:C
IC SDRAM 512MBIT 200MHZ 60BGA
MT46H32M16LFBF-5 AIT:C TR
IC SDRAM 512MBIT 200MHZ 60BGA
MT46H256M32R4JV-5 WT:B
IC SDRAM 8GBIT 200MHZ 168FBGA
MT46H32M16LFBF-5 IT:C TR
IC SDRAM 512MBIT 200MHZ 60BGA
MT46H32M16LFBF-5 IT:B TR
IC SDRAM 512MBIT 200MHZ 60BGA
MT46H256M32R4JV-5 IT:B TR
IC SDRAM 8GBIT 200MHZ 168FBGA
MT46H32M16LFBF-5:B
MT46H32M16LFBF-5:B TR
IC SDRAM 512MBIT 200MHZ 60BGA
CRCW0402432KFKED
RES SMD 432K OHM 1% 1/16W 0402
RCL121810R0FKEK
RES SMD 10 OHM 1W 1812 WIDE
MMA02040C3303FB300
RES SMD 330K OHM 1% 0.4W 0204
RGC0805DTC715R
RES SMD 715 OHM 0.5% 1/8W 0805
CRCW080527K0JNTC
RES SMD 27K OHM 5% 1/8W 0805
ESR18EZPF5100
RES SMD 510 OHM 1% 1/3W 1206
ERJ-S08F34R8V
RES SMD 34.8 OHM 1% 1/4W 1206
CRCW06039K10FHEAP
RES SMD 9.1K OHM 1% 1/10W 0603
CRCW080518K0FHEAP
RES SMD 18K OHM 1% 1/8W 0805
RT0805CRE07154RL
RES SMD 154 OHM 0.25% 1/8W 0805
